Daily Papers

Macro placement significantly affects a chip's post-route performance, power, and area (PPA). Most placement methods optimize half-perimeter wirelength (HPWL) as the primary objective. However, recent benchmarking shows a near-zero correlation between HPWL and post-route timing metrics such as the worst negative slack (WNS) and total negative slack (TNS). As a result, all six evaluated artificial intelligence (AI) placers degraded PPA relative to the hierarchical baseline. Recent efforts have tried to train cross-stage predictors to close this gap. However, existing methods focus on macro-only representations and use pre-route metrics as training labels. A label fidelity study of ten circuits at four design flow stages reveals that HPWL and pre-route timing poorly reflect final post-route timing rankings. In contrast, post-global-routing achieves the best balance between final timing fidelity and label generation cost-effectiveness. Based on this finding, PPAPlace is a timing-driven differentiable surrogate predicting post-route PPA from macro and standard-cell placements. The surrogate is a dual-stream predictor that combines graph attention over the chip netlist with spatial convolution over the placement grid. It is trained on post-global-routing labels. The predicted WNS and TNS gradients flow end-to-end back to cell coordinates. PPAPlace exploits these gradients in two ways: as a co-objective injected into an analytical placer's optimization loop (PPAPlace-CoOpt), and as a post-placement refinement step that adjusts macro positions via projected gradient descent (PPAPlace-Refine). On five ChiPBench test circuits excluded from training, PPAPlace improves average WNS and TNS by 22\% and 51\% over the hierarchical baseline while preserving power and routability, using the same predictor without test-circuit retraining. Code is available at https://github.com/ValleyC/PPAPlace.

As the conventional scaling of logic devices comes to an end, functional wafer backside and 3D transistor stacking are consensus for next-generation logic technology, offering considerable design space extension for powers, signals or even devices on the wafer backside. The Flip FET (FFET), a novel transistor architecture combining 3D transistor stacking and fully functional wafer backside, was recently proposed. With symmetric dual-sided standard cell design, the FFET can deliver around 12.5% cell area scaling and faster but more energy-efficient libraries beyond other stacked transistor technologies such as CFET. Besides, thanks to the novel cell design with dual-sided pins, the FFET supports dual-sided signal routing, delivering better routability and larger backside design space. In this work, we demonstrated a comprehensive FFET evaluation framework considering physical implementation and block-level power-performance-area (PPA) assessment for the first time, in which key functions are dual-sided routing and dual-sided RC extraction. A 32-bit RISC-V core was used for the evaluation here. Compared to the CFET with single-sided signals, the FFET with single-sided signals achieved 23.3% post-P&R core area reduction, 25.0% higher frequency and 11.9% lower power at the same utilization, and 16.0 % higher frequency at the same core area. Meanwhile, the FFET supports dual-sided signals, which can further benefit more from flexible allocation of cell input pins on both sides. By optimizing the input pin density and BEOL routing layer number on each side, 10.6% frequency gain was realized without power degradation compared to the one with single-sided signal routing. Moreover, the routability and power efficiency of FFET barely degrades even with the routing layer number reduced from 12 to 5 on each side, validating the great space for cost-friendly design enabled by FFET.